碳化硅 MOSFET | | | | | | | | | | | | |
**APS自主研發的碳化矽MOSFET具備高開關頻率,低導通電阻,優良高溫特性,與耐高壓等優勢,有著替代現有IGBT和超結MOSFET的巨大潛力。其應用在更高頻率的電源設計裡,能夠縮小系統儲能器件的體積,例如大電感,大變壓器及大容量電容等,從而降低系統成本。 |
**APS推出的第二代平面結構MOSFET促進了光伏風電,新能源汽車車,不斷電供應系統,伺服器電源等應用往高效與高可性靠發展的趨勢。已有的封裝類型包括:TO247-3、TO247-4等。 |
Part Number | Data Sheet | Generation | Qualification | Blocking Voltage VDC | RDS(on) | Recommended VGS | Current Rating | Total Gate Charge | PD(TJ=25℃) | Package | Release Schedule | Recommended for New Design? |
| | | | | | | | | | | | |
ACM130L065BNN | | Gen 2 | Industrial | 650 V | 130 mΩ | 18 V | 28 A | 40 nC | 136 W | TO247-3 | Available | No |
ACM060L065BNN | | Gen 2 | Industrial | 650 V | 60 mΩ | 18 V | 51 A | 78 nC | 208 W | TO247-3 | Available | No |
ACM030L065BNN | | Gen 2 | Industrial | 650 V | 30 mΩ | 18 V | 92 A | 155 nC | 326 W | TO247-3 | Available | No |
ACM015L065Q | | Gen 2 | Industrial | 650 V | 15 mΩ | 18 V | 140 A | 270 nC | 428 W | TO247-4 | Available | No |
ACM018P120QNN | | Gen 2 | Industrial | 1200 V | 18 mΩ | 20 V | 105 A | 235 nC | 428 W | TO247-4 | 2023Q1 | Yes |
ACM035P120QNN | | Gen 2 | Industrial | 1200 V | 35 mΩ | 20 V | 69 A | 136 nC | 300 W | TO247-4 | Available | Yes |
ACM035P120BNN | | Gen 2 | Industrial | 1200 V | 35 mΩ | 20 V | 69 A | 135 nC | 330 W | TO247-3 | 2023Q1 | Yes |
ACM035P120QAN | | Gen 2 | Industrial | 1200 V | 35 mΩ | 20 V | 69 A | 135 nC | 330 W | TO247-4 | 2023Q1 | Y |